Key Metrics
CiteScore 

8.1
Eigenfactor 

0.01 - 0.05
Impact Factor 

< 5
Scite Index 

0.92 5-Year SI

SJR 

Q1Physics and Astronomy (all)

SNIP 

1.33
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Topics Covered on Physical Review Applied
Physical Review Applied Journal Specifications
Indexed in the following public directories
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SJR
| Overview | |
| Publisher | AMER PHYSICAL SOC |
| Language | English |
| Frequency | Monthly |
| General Details | |
| Language | English |
| Frequency | Monthly |
| Publication Start Year | 2014 |
| Publisher URL | Visit website |
| Website URL | Visit website |
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Recently Published Papers in Physical Review Applied
Predicting sampling advantage of stochastic Ising machines for quantum simulations
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Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mi>M</mml:mi> <mml:mi>N</mml:mi> <mml:msub> <mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">H</mml:mi> </mml:mrow> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:math> ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mi>M</mml:mi> <mml:mo>,</mml:mo> <mml:mi>N</mml:mi> </mml:math> = C, Si, Ge): Enabling sub-5-nm MOSFETs compatible with silicon-based manufacturing
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Impact of defects, buffer layer thickness, and substrate orientation on optical properties of epitaxial germanium
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Predicting sampling advantage of stochastic Ising machines for quantum simulations
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Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mi>M</mml:mi> <mml:mi>N</mml:mi> <mml:msub> <mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">H</mml:mi> </mml:mrow> </mml:mrow> <mml:mn>2</mml:mn> </mml:msub> </mml:math> ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mi>M</mml:mi> <mml:mo>,</mml:mo> <mml:mi>N</mml:mi> </mml:math> = C, Si, Ge): Enabling sub-5-nm MOSFETs compatible with silicon-based manufacturing
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Impact of defects, buffer layer thickness, and substrate orientation on optical properties of epitaxial germanium
- 23 Jan 2026
- Physical Review Applied