Key Metrics
CiteScore 

3.5
Impact Factor 

< 5
SJR 

Q2Inorganic Chemistry

SNIP 

0.84
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Topics Covered on Journal of Crystal Growth
Journal of Crystal Growth Journal Specifications
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SJR
| Overview | |
| Publisher | ELSEVIER |
| Language | Multi-Language |
| Frequency | Semi-monthly |
| General Details | |
| Language | Multi-Language |
| Frequency | Semi-monthly |
| Publication Start Year | 1967 |
| Publisher URL | Visit website |
| Website URL | Visit website |
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Recently Published Papers in Journal of Crystal Growth
Resource recovery of waste quartz crucibles: high-purity cristobalite sand preparation via induced crystallization
- 1 Aug 2026
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Study on high-quality reversed domain fabrication in hydrothermal PPKTP crystals
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Influence of V/III ratio of p-GaAsSb base on the current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
- 1 Aug 2026
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Numerical simulation of flow and mass transfer during large scale, long seed growth of KDP crystals based on the supersaturation dead zone theory
- 1 Aug 2026
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Structural and spectral aspects of Ho3+/Nd3+-codoped CsCdCl3 crystals for ∼ 2 μm and ∼ 3.9 μm laser applications
- 1 Jul 2026
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Development and characterization of high-quality 150 mm p-type 4H-SiC substrates using solution growth
- 1 Jul 2026
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Resource recovery of waste quartz crucibles: high-purity cristobalite sand preparation via induced crystallization
- 1 Aug 2026
- Journal of Crystal Growth
Study on high-quality reversed domain fabrication in hydrothermal PPKTP crystals
- 1 Aug 2026
- Journal of Crystal Growth
Influence of V/III ratio of p-GaAsSb base on the current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
- 1 Aug 2026
- Journal of Crystal Growth
Numerical simulation of flow and mass transfer during large scale, long seed growth of KDP crystals based on the supersaturation dead zone theory
- 1 Aug 2026
- Journal of Crystal Growth
Structural and spectral aspects of Ho3+/Nd3+-codoped CsCdCl3 crystals for ∼ 2 μm and ∼ 3.9 μm laser applications
- 1 Jul 2026
- Journal of Crystal Growth
Development and characterization of high-quality 150 mm p-type 4H-SiC substrates using solution growth
- 1 Jul 2026
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