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IEEE Transactions on Electron Devices : Impact Factor & More

eISSN: 1557-9646pISSN: 0018-9383

Aims and Scope of IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices (T-ED) is a monthly peer-reviewed scientific journal publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth. Less

Key Metrics

CiteScore
5.3
Impact Factor
< 5
SJR
Q1Electrical and Electronic Engineering
SNIP
1.36
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Topics Covered on IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices Journal Specifications

Indexed in the following public directories

  • Scopus Scopus
  • SJR SJR
Overview
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Language English
Frequency Monthly
General Details
LanguageEnglish
FrequencyMonthly
Publication Start Year1954
Publisher URLVisit website
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Recently Published Papers in IEEE Transactions on Electron Devices

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Effect of Traps in Si/SiGe NPN Selectors for Cross-Point Memory Array Architecture
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
A Back-End-of-Line-Compatible Ferroelectric Ga-Doped HfO₂ Capacitor With Low Thermal Budget (400°C)
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Investigation of Total Ionizing Dose Effects in Radiation-Hardened SOI FinFETs With SiGe Channel
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Analysis of High Gain Pinned Photodiodes Designs for Low Flux Imaging Applications
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Temperature- and Bias-Dependent Capture–Emission Time Maps in Electrolyte-Gated Graphene Field-Effect Transistors
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Effect of Traps in Si/SiGe NPN Selectors for Cross-Point Memory Array Architecture
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
A Back-End-of-Line-Compatible Ferroelectric Ga-Doped HfO₂ Capacitor With Low Thermal Budget (400°C)
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Investigation of Total Ionizing Dose Effects in Radiation-Hardened SOI FinFETs With SiGe Channel
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Analysis of High Gain Pinned Photodiodes Designs for Low Flux Imaging Applications
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices
Temperature- and Bias-Dependent Capture–Emission Time Maps in Electrolyte-Gated Graphene Field-Effect Transistors
  • 1 Nov 2025
  • IEEE Transactions on Electron Devices

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