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IEEE Electron Device Letters : Impact Factor & More

eISSN: 1558-0563pISSN: 0741-3106

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IEEE Electron Device Letters Key Metrics

CiteScore
8.5
Eigenfactor
0.01 - 0.05
Impact Factor
< 5
SJR
Q1Electrical and Electronic Engineering
SNIP
1.65

Topics Covered on IEEE Electron Device Letters

Electric field
Breakdown voltage
Gate dielectric
Room temperature
Simulation
Heterojunction
Ultraviolet
Contact resistance
Performance improvement
Pressure sensor
Subthreshold swing
Vertical integration
Gate control
Imaging array
Resistive switching
Dual gate
Silicon carbide
Editorial board
Surface acoustic wave
Atomic layer deposition

IEEE Electron Device Letters Journal Specifications

Overview
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Language English
Frequency Monthly
General Details
LanguageEnglish
FrequencyMonthly
Publication Start Year1980
Publisher URLVisit website
Website URLVisit website
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FAQs on IEEE Electron Device Letters

How long has IEEE Electron Device Letters been actively publishing? Faqs

IEEE Electron Device Letters has been in operation since 1980 till date.

What is the publishing frequency of IEEE Electron Device Letters? Faqs

IEEE Electron Device Letters published with a Monthly frequency.

How many articles did IEEE Electron Device Letters publish last year? Faqs

In 2023, IEEE Electron Device Letters publsihed 597 articles.

What is the eISSN & pISSN for IEEE Electron Device Letters? Faqs

For IEEE Electron Device Letters, eISSN is 1558-0563 and pISSN is 0741-3106.

What is Citescore for IEEE Electron Device Letters? Faqs

Citescore for IEEE Electron Device Letters is 8.5.

What is SNIP score for IEEE Electron Device Letters? Faqs

SNIP score for IEEE Electron Device Letters is 1.65.

What is the SJR for IEEE Electron Device Letters? Faqs

SJR for IEEE Electron Device Letters is Q1.

Who is the publisher of IEEE Electron Device Letters? Faqs

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC is the publisher of IEEE Electron Device Letters.

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