Solid-State Electronics : Impact Factor & More
eISSN: 1879-2405pISSN: 0038-1101
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Key Metrics
CiteScore 
3.5
Impact Factor
< 5
SJR
Q2Materials Chemistry
SNIP
0.79
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Topics Covered on Solid-State Electronics
Solid-State Electronics Journal Specifications
Indexed in the following public directories
Web of Science 
Scopus 
Inspec 
SJR
| Overview | |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Language | English |
| Frequency | Monthly |
| General Details | |
| Language | English |
| Frequency | Monthly |
| Publication Start Year | 1960 |
| Publisher URL | Visit website |
| Website URL | Visit website |
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Recently Published Papers in Solid-State Electronics
Metal-insulator-semiconductor diodes based on solution-processed ZrO2 and ZnO thin films fabricated on plastic substrates
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Implementation of transient-tolerant memristor-based threshold logic gate unit cell
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A method for series resistance extraction in advanced MOSFETs
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Enhancement of IGZO TFT performance and reliability by controlling the N2/O2 annealing ambient
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Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics
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Investigation of cap layer effects on low-contact-resistance vanadium-based Au-free low-temperature ohmic contacts for AlGaN/GaN HEMT
- 1 Jun 2026
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Metal-insulator-semiconductor diodes based on solution-processed ZrO2 and ZnO thin films fabricated on plastic substrates
- 1 Aug 2026
- Solid-State Electronics
Implementation of transient-tolerant memristor-based threshold logic gate unit cell
- 1 Aug 2026
- Solid-State Electronics
A method for series resistance extraction in advanced MOSFETs
- 1 Aug 2026
- Solid-State Electronics
Enhancement of IGZO TFT performance and reliability by controlling the N2/O2 annealing ambient
- 1 Aug 2026
- Solid-State Electronics
Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics
- 1 Aug 2026
- Solid-State Electronics
Investigation of cap layer effects on low-contact-resistance vanadium-based Au-free low-temperature ohmic contacts for AlGaN/GaN HEMT
- 1 Jun 2026
- Solid-State Electronics
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