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Semiconductor Science and Technology : Impact Factor & More

eISSN: 1361-6641pISSN: 0268-1242

Aims and Scope of Semiconductor Science and Technology

Semiconductor Science and Technology is a peer-reviewed scientific journal covering all applied or explicitly applicable experimental and theoretical studies of the properties of semiconductors and their interfaces, devices, and packaging. The journal publishes different article types including research papers, rapid communications, and topical reviews. The editor-in-chief is Koji Ishibashi (Advanced Device Laboratory, RIKEN, Japan). The previous editors-in-chief were Kornelius Nielsch (University of Hamburg) and Laurens Molenkamp (University of Würzburg). Less

Key Metrics

CiteScore
3.8
Impact Factor
< 5
SJR
Q2Materials Chemistry
SNIP
0.71
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Topics Covered on Semiconductor Science and Technology

Semiconductor Science and Technology Journal Specifications

Indexed in the following public directories

  • Web of Science Web of Science
  • Scopus Scopus
  • Inspec Inspec
  • SJR SJR
Overview
Publisher IOP PUBLISHING LTD
Language English
Frequency Monthly
General Details
LanguageEnglish
FrequencyMonthly
Publication Start Year1986
Publisher URLVisit website
Website URLVisit website
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Recently Published Papers in Semiconductor Science and Technology

Preparation and properties of Cu₂O\\Al₂O₃\\ZnSnN₂ heterojunctions
  • 1 May 2026
  • Semiconductor Science and Technology
Dielectric relaxation and leakage current properties of oxygen vacancy engineered titanium oxide-based thin-film devices
  • 1 May 2026
  • Semiconductor Science and Technology
Impact of miscut angles on mechanical properties and surface damage of (100) β-Ga₂O₃
  • 1 May 2026
  • Semiconductor Science and Technology
Investigation of carrier transport mechanism in SiC FinFET with L-shaped P-shield for improving gate oxide reliability and switching performance
  • 1 May 2026
  • Semiconductor Science and Technology
Ultra-low on-state voltage and saturation current carrier stored trench bipolar transistor with orthogonal 3D arranged dual-trench
  • 1 May 2026
  • Semiconductor Science and Technology
Optimized performance trade-offs in composite electrode GaN Schottky barrier diodes
  • 1 May 2026
  • Semiconductor Science and Technology
Preparation and properties of Cu₂O\\Al₂O₃\\ZnSnN₂ heterojunctions
  • 1 May 2026
  • Semiconductor Science and Technology
Dielectric relaxation and leakage current properties of oxygen vacancy engineered titanium oxide-based thin-film devices
  • 1 May 2026
  • Semiconductor Science and Technology
Impact of miscut angles on mechanical properties and surface damage of (100) β-Ga₂O₃
  • 1 May 2026
  • Semiconductor Science and Technology
Investigation of carrier transport mechanism in SiC FinFET with L-shaped P-shield for improving gate oxide reliability and switching performance
  • 1 May 2026
  • Semiconductor Science and Technology
Ultra-low on-state voltage and saturation current carrier stored trench bipolar transistor with orthogonal 3D arranged dual-trench
  • 1 May 2026
  • Semiconductor Science and Technology
Optimized performance trade-offs in composite electrode GaN Schottky barrier diodes
  • 1 May 2026
  • Semiconductor Science and Technology

FAQs on Semiconductor Science and Technology