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Topics Covered on IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Journal Specifications
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| Overview | |
| Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Language | English |
| Frequency | Quarterly |
| General Details |
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Recently Published Papers in IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Publication Information
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Table of Contents
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancellation Time
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
Simulation of the Single Event Burnout in Lateral Enhancement mode β-Ga <sub>2</sub> O <sub>3</sub> MOSFET Devices
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
A Process-Robust Split-Gate eFlash Memory with Spacer-Defined Floating Gate in 55-nm Node
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Publication Information
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Table of Contents
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancellation Time
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
Simulation of the Single Event Burnout in Lateral Enhancement mode β-Ga <sub>2</sub> O <sub>3</sub> MOSFET Devices
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
A Process-Robust Split-Gate eFlash Memory with Spacer-Defined Floating Gate in 55-nm Node
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability