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IEEE Transactions on Device and Materials Reliability : Impact Factor & More

eISSN: 1558-2574pISSN: 1530-4388

Key Metrics

CiteScore
3.9
Impact Factor
< 5
SNIP
1.24
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Topics Covered on IEEE Transactions on Device and Materials Reliability

IEEE Transactions on Device and Materials Reliability Journal Specifications

Indexed in the following public directories

  • Web of Science Web of Science
  • Scopus Scopus
  • Inspec Inspec
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Overview
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Language English
Frequency Quarterly
General Details
LanguageEnglish
FrequencyQuarterly
Publication Start Year2001
Publisher URLVisit website
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Recently Published Papers in IEEE Transactions on Device and Materials Reliability

IEEE Transactions on Device and Materials Reliability Publication Information
  • 1 Mar 2026
  • IEEE Transactions on Device and Materials Reliability
Table of Contents
  • 1 Mar 2026
  • IEEE Transactions on Device and Materials Reliability
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancellation Time
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
Simulation of the Single Event Burnout in Lateral Enhancement mode β-Ga <sub>2</sub> O <sub>3</sub> MOSFET Devices
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
A Process-Robust Split-Gate eFlash Memory with Spacer-Defined Floating Gate in 55-nm Node
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Publication Information
  • 1 Mar 2026
  • IEEE Transactions on Device and Materials Reliability
Table of Contents
  • 1 Mar 2026
  • IEEE Transactions on Device and Materials Reliability
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancellation Time
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
Simulation of the Single Event Burnout in Lateral Enhancement mode β-Ga <sub>2</sub> O <sub>3</sub> MOSFET Devices
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability
A Process-Robust Split-Gate eFlash Memory with Spacer-Defined Floating Gate in 55-nm Node
  • 1 Jan 2026
  • IEEE Transactions on Device and Materials Reliability

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