Paperpal Prime Logo

IEEE Transactions on Electron Devices : Impact Factor & More

eISSN: 1557-9646pISSN: 0018-9383

Aims and Scope of IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices (T-ED) is a monthly peer-reviewed scientific journal publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth. Less

Key Metrics

CiteScore
5.3
Impact Factor
< 5
SJR
Q1Electrical and Electronic Engineering
SNIP
1.36
Recommended pre-submission checks
Powered by Paperpal by Editage

Topics Covered on IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices Journal Specifications

Indexed in the following public directories

  • Scopus Scopus
  • SJR SJR
Overview
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Language English
Frequency Monthly
General Details
LanguageEnglish
FrequencyMonthly
Publication Start Year1954
Publisher URLVisit website
View less

Planning to publish in IEEE Transactions on Electron Devices ?

Upload your Manuscript to get

  • Degree of match
  • Common matching concepts
  • Additional journal recommendations
Free Report

Recently Published Papers in IEEE Transactions on Electron Devices

Precise Surface Potential Modeling for Compact DC Models of a-IGZO Thin Film Transistors
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Comprehensive DTCO Study of Layout Designs in Aggressively Scaled Stacked Transistors at A10 and A7 Nodes
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Temperature-Dependent Conduction and Dielectric Engineering of Dual-Barrier Pt/PtO <sub>x</sub> /Nb <sub>2</sub> O <sub>5</sub> /SiO <sub>2</sub> / <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> MOS Capacitors
  • 1 May 2026
  • IEEE Transactions on Electron Devices
A MOSFET Channel Model for Flexible Inorganic Semiconductors
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Carbon Nanotube Surface Engineering Through Supercritical CO <sub>2</sub> Pretreatment for High-Quality Gate Dielectric Deposition
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Precise Surface Potential Modeling for Compact DC Models of a-IGZO Thin Film Transistors
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Comprehensive DTCO Study of Layout Designs in Aggressively Scaled Stacked Transistors at A10 and A7 Nodes
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Temperature-Dependent Conduction and Dielectric Engineering of Dual-Barrier Pt/PtO <sub>x</sub> /Nb <sub>2</sub> O <sub>5</sub> /SiO <sub>2</sub> / <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> MOS Capacitors
  • 1 May 2026
  • IEEE Transactions on Electron Devices
A MOSFET Channel Model for Flexible Inorganic Semiconductors
  • 1 May 2026
  • IEEE Transactions on Electron Devices
Carbon Nanotube Surface Engineering Through Supercritical CO <sub>2</sub> Pretreatment for High-Quality Gate Dielectric Deposition
  • 1 May 2026
  • IEEE Transactions on Electron Devices

FAQs on IEEE Transactions on Electron Devices