IEEE Transactions on Device and Materials Reliability : Impact Factor & More
eISSN: 1558-2574pISSN: 1530-4388
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Key Metrics
CiteScore 
3.9
Impact Factor
< 5
SNIP
1.24
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Topics Covered on IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Journal Specifications
Indexed in the following public directories
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| Overview | |
| Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Language | English |
| Frequency | Quarterly |
| General Details |
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Recently Published Papers in IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Publication Information
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Table of Contents
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Mitigation of Buffer Trap Induced Current Collapse in Quaternary Double Channel Graded-Barrier InAlGaN/GaN HEMTs
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
Impact of Post-Metallization Annealing on the Reliability of Barrierless Mo Word Lines
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
A Novel Si/SiC heterojunction LDMOS With Improved Reverse Recovery and SEB Performances
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability Publication Information
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Table of Contents
- 1 Mar 2026
- IEEE Transactions on Device and Materials Reliability
Mitigation of Buffer Trap Induced Current Collapse in Quaternary Double Channel Graded-Barrier InAlGaN/GaN HEMTs
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
Impact of Post-Metallization Annealing on the Reliability of Barrierless Mo Word Lines
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
A Novel Si/SiC heterojunction LDMOS With Improved Reverse Recovery and SEB Performances
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress
- 1 Jan 2026
- IEEE Transactions on Device and Materials Reliability
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