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ADVANCES IN OPTOELECTRONICS : Impact Factor & More
eISSN: 1687-5648pISSN: 1687-563X
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ADVANCES IN OPTOELECTRONICS Key Metrics
SJR 
Q4Electrical and Electronic Engineering
ADVANCES IN OPTOELECTRONICS Journal Specifications
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Web of Science
| Overview | |
| Publisher | HINDAWI LTD |
| Language | English |
| Frequency | Irregular |
| General Details |
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Recently Published Papers in ADVANCES IN OPTOELECTRONICS
Impact of the Four-Sideband and Two-Sideband Theories in Designing of Fiber Optical Parametric Amplifiers
- 7 Oct 2019
- Advances in OptoElectronics
1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)
- 17 Jun 2019
- Advances in OptoElectronics
Application of M Sequence Family Measurement Matrix in Streak Camera Imaging
- 31 Dec 2018
- Advances in OptoElectronics
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
- 14 Nov 2018
- Advances in OptoElectronics
A Practical Method to Design Reflector-Based Light-Emitting Diode Luminaire for General Lighting
- 18 Oct 2018
- Advances in OptoElectronics
Performance Analysis of Flat Gain Wideband Raman Amplifier for S+C and C+L Band DWDM System
- 15 Aug 2018
- Advances in OptoElectronics
Impact of the Four-Sideband and Two-Sideband Theories in Designing of Fiber Optical Parametric Amplifiers
- 7 Oct 2019
- Advances in OptoElectronics
1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)
- 17 Jun 2019
- Advances in OptoElectronics
Application of M Sequence Family Measurement Matrix in Streak Camera Imaging
- 31 Dec 2018
- Advances in OptoElectronics
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
- 14 Nov 2018
- Advances in OptoElectronics
A Practical Method to Design Reflector-Based Light-Emitting Diode Luminaire for General Lighting
- 18 Oct 2018
- Advances in OptoElectronics
Performance Analysis of Flat Gain Wideband Raman Amplifier for S+C and C+L Band DWDM System
- 15 Aug 2018
- Advances in OptoElectronics
FAQs on ADVANCES IN OPTOELECTRONICS
How long has ADVANCES IN OPTOELECTRONICS been actively publishing? 
ADVANCES IN OPTOELECTRONICS has been in operation since 2007 till date.
What is the publishing frequency of ADVANCES IN OPTOELECTRONICS?
ADVANCES IN OPTOELECTRONICS published with a Irregular frequency.
How many articles did ADVANCES IN OPTOELECTRONICS publish last year?
In 2024, ADVANCES IN OPTOELECTRONICS publsihed undefined articles.
What is the eISSN & pISSN for ADVANCES IN OPTOELECTRONICS?
For ADVANCES IN OPTOELECTRONICS, eISSN is 1687-5648 and pISSN is 1687-563X.
What is the SJR for ADVANCES IN OPTOELECTRONICS?
SJR for ADVANCES IN OPTOELECTRONICS is Q4.
Who is the publisher of ADVANCES IN OPTOELECTRONICS?
HINDAWI LTD is the publisher of ADVANCES IN OPTOELECTRONICS.
