Key Metrics
3.5
CiteScore
CiteScore
CiteScore measures average citations received per document published in the serial.
< 5
Impact Factor
Impact Factor
Impact factor of a journal is calculated by dividing the number of current year citations to the source items published in that journal during the previous two years.
Q2
Materials Chemistry
SJR
- Q2 Materials Chemistry
- Q2 Condensed Matter Physics
- Q2 Electrical and Electronic Engineering
- Q2 Electronic, Optical and Magnetic Materials
SJR
SJR
SCImago Journal Rank measures weighted citations received by the serial. Citation weighting depends on subject field and prestige (SJR) of the citing serial.
0.79
SNIP
SNIP
Source Normalized Impact per Paper measures actual citations received relative to citations expected for the serial’s subject field.
3 Mo
Time to Publish
Time to Publish
Based on turnaround time from submission to publication for papers (articles & reviews) published in 2022 and for journals with a sample of more than 10 papers.
Topics Covered
- Breakdown voltage
- Phthalocyanine
- MOSFET
- Simulation
- Heterojunction
- Crystal growth rate
- Contact resistance
- Experimental data
- Irradiation
- Infrared
- Threshold voltage
- Chenodeoxycholic acid
- Thermal model
- Resistive switching
- Room temperature
- Drain current
- Storage class memory
- Device simulation
- Atomic layer deposition
- Subthreshold swing
Journal Specifications
| Overview | |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Language | English |
| Frequency | Monthly |
| General Details | |
| Language | English |
| Frequency | Monthly |
| Publication Start Year | 1960 |
| Publisher URL | Visit website |
| Website URL | Visit website |
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Check my PaperRecently Published Papers
-
Full paper
Editorial Board
- 1 Dec 23
- Solid-State Electronics
-
Full paper
Editorial Board
- 1 Feb 15
- Solid-State Electronics
-
Full paper
Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers
- 1 Feb 15
- Solid-State Electronics
-
Full paper
Editorial Board
- 1 Aug 14
- Solid-State Electronics
-
Full paper
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
- 3 Jan 11
- Solid-State Electronics
-
Full paper
Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes
- 1 Aug 10
- Solid-State Electronics
Scite analysis
Powered by scite_
15.3k articles received 92.9k citations see all
- 3,496 Supporting
- 87,551 Mentioning
- 310 Contrasting
Editorial notices
- 1 Retractions
- 6 Withdrawals
- 0 Corrections
- 7 Errata
- 0 Expression of Concern
Time To Publish
Time to Publish
Based on turnaround time from submission to publication for papers (articles & reviews) published in 2022 and for journals with a sample of more than 10 papers.
Time to Publish
Based on turnaround time from submission to publication for papers (articles & reviews) published in 2022 and for journals with a sample of more than 10 papers.
% of papers by time taken from submission to publication
0 to 3 months
46%
4 to 6 months
45%
7 to 9 months
8%
Above 9 months
1%
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FAQs
How long has Solid-State Electronics been actively publishing?
Solid-State Electronics has been in operation since 1960 till date.
What is the publishing frequency of Solid-State Electronics ?
Solid-State Electronics published with a Monthly frequency.
How many articles did Solid-State Electronics publish last years ?
In 2023, Solid-State Electronics published 1 articles.
What is the eISSN & pISSN for Solid-State Electronics ?
For Solid-State Electronics,eISSN is 1879-2405 and pISSN is0038-1101.
What is Citescore for Solid-State Electronics ?
Citescore for Solid-State Electronics is 3.5.
What is SNIP score for Solid-State Electronics ?
SNIP score for Solid-State Electronics is 0.79.
What is the SJR for Solid-State Electronics ?
SJR for Solid-State Electronics is Q2.
Who is the publisher of Solid-State Electronics ?
PERGAMON-ELSEVIER SCIENCE LTD is the publisher of Solid-State Electronics.