Aims and Scope
IEEE Transactions on Electron Devices (T-ED) is a monthly peer-reviewed scientific journal publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
Key Metrics
5.3
CiteScore
CiteScore
CiteScore measures average citations received per document published in the serial.
< 5
Impact Factor
Impact Factor
Impact factor of a journal is calculated by dividing the number of current year citations to the source items published in that journal during the previous two years.
0.92
5-Year SI
5-year SI
- N/A 2-year SI
- 0.93 Lifetime SI
Scite Index
Scite Index
scite Index is the ratio of citations supporting research which is published in the journal to sum of citations either supporting or contrasting the research published in the journal for the same time period. Minimum 100 supporting citations required.
Q1
Electrical and Electronic Engineering
SJR
- Q1 Electrical and Electronic Engineering
- Q1 Electronic, Optical and Magnetic Materials
SJR
SJR
SCImago Journal Rank measures weighted citations received by the serial. Citation weighting depends on subject field and prestige (SJR) of the citing serial.
1.36
SNIP
SNIP
Source Normalized Impact per Paper measures actual citations received relative to citations expected for the serial’s subject field.
Indexed in the following public directories
-
Scopus -
SJR
Topics Covered
- Heterojunction
- Breakdown voltage
- Oxide
- MOSFET
- Simulation
- CMOS
- Contact resistance
- Surface roughness
- Photodiode
- Broadband
- Gate dielectric
- Low voltage
- Experimental data
- Resistive switching
- Irradiation
- Biosensor
- Threshold voltage
- Electron mobility
- Room temperature
- Flash memory
Journal Specifications
| Overview | |
| Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Language | English |
| Frequency | Monthly |
| General Details | |
| Language | English |
| Frequency | Monthly |
| Publication Start Year | 1954 |
| Publisher URL | Visit website |
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30.7k articles received 274.5k citations see all
- 7,717 Supporting
- 263,396 Mentioning
- 542 Contrasting
Editorial notices
- 1 Retractions
- 0 Withdrawals
- 0 Corrections
- 1 Errata
- 0 Expression of Concern
FAQs
How long has IEEE Transactions on Electron Devices been actively publishing?
IEEE Transactions on Electron Devices has been in operation since 1954 till date.
What is the publishing frequency of IEEE Transactions on Electron Devices ?
IEEE Transactions on Electron Devices published with a Monthly frequency.
What is the eISSN & pISSN for IEEE Transactions on Electron Devices ?
For IEEE Transactions on Electron Devices,eISSN is 1557-9646 and pISSN is0018-9383.
What is Citescore for IEEE Transactions on Electron Devices ?
Citescore for IEEE Transactions on Electron Devices is 5.3.
What is SNIP score for IEEE Transactions on Electron Devices ?
SNIP score for IEEE Transactions on Electron Devices is 1.36.
What is the SJR for IEEE Transactions on Electron Devices ?
SJR for IEEE Transactions on Electron Devices is Q1.
Who is the publisher of IEEE Transactions on Electron Devices ?
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC is the publisher of IEEE Transactions on Electron Devices.