Key Metrics
3.9
CiteScore
CiteScore
CiteScore measures average citations received per document published in the serial.
< 5
Impact Factor
Impact Factor
Impact factor of a journal is calculated by dividing the number of current year citations to the source items published in that journal during the previous two years.
1.24
SNIP
SNIP
Source Normalized Impact per Paper measures actual citations received relative to citations expected for the serial’s subject field.
Topics Covered
- Electrostatic discharge
- Simulation
- Room temperature
- Sram cell
- Junction temperature
- Printed circuit board
- CMOS
- Flash memory
- Redistribution layer
- Static noise margin
- Nonlinear capacitance
- Variable capacitor
- Electrochemical migration
- Current driver
- Electromigration
- MOSFET
- Single event upset
- Power grid
- Gate dielectric
- Breakdown voltage
Journal Specifications
| Overview | |
| Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Language | English |
| Frequency | Quarterly |
| General Details | |
| Language | English |
| Frequency | Quarterly |
| Publication Start Year | 2001 |
| Publisher URL | Visit website |
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Check my PaperRecently Published Papers
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Full paper
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications
- 1 Mar 24
- IEEE Transactions on Device and Materials Reliability
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Full paper
Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage
- 1 Mar 24
- IEEE Transactions on Device and Materials Reliability
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Table of Contents
- 1 Mar 24
- IEEE Transactions on Device and Materials Reliability
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Full paper
Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment
- 1 Mar 24
- IEEE Transactions on Device and Materials Reliability
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Full paper
Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits
- 1 Mar 24
- IEEE Transactions on Device and Materials Reliability
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Full paper
Data-Driven Stress/Warpage Analyses Based on Stoney Equation for Packaging Applications
- 1 Mar 24
- IEEE Transactions on Device and Materials Reliability
Scite analysis
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2.4k articles received 14.7k citations see all
- 415 Supporting
- 14,160 Mentioning
- 32 Contrasting
Editorial notices
- 0 Retractions
- 0 Withdrawals
- 0 Corrections
- 0 Errata
- 0 Expression of Concern
FAQs
How long has IEEE Transactions on Device and Materials Reliability been actively publishing?
IEEE Transactions on Device and Materials Reliability has been in operation since 2001 till date.
What is the publishing frequency of IEEE Transactions on Device and Materials Reliability ?
IEEE Transactions on Device and Materials Reliability published with a Quarterly frequency.
How many articles did IEEE Transactions on Device and Materials Reliability publish last years ?
In 2023, IEEE Transactions on Device and Materials Reliability published 93 articles.
What is the eISSN & pISSN for IEEE Transactions on Device and Materials Reliability ?
For IEEE Transactions on Device and Materials Reliability,eISSN is 1558-2574 and pISSN is1530-4388.
What is Citescore for IEEE Transactions on Device and Materials Reliability ?
Citescore for IEEE Transactions on Device and Materials Reliability is 3.9.
What is SNIP score for IEEE Transactions on Device and Materials Reliability ?
SNIP score for IEEE Transactions on Device and Materials Reliability is 1.24.
Who is the publisher of IEEE Transactions on Device and Materials Reliability ?
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC is the publisher of IEEE Transactions on Device and Materials Reliability.